• DocumentCode
    3647806
  • Title

    Investigation of transport properties of carriers in GaAs using the PA method

  • Author

    A.I. Bojicic;D.M. Todorovic;P.M. Nikolic;V. Blagojevic;K.T. Radulovic

  • Author_Institution
    Joint Lab. for Adv. Mater., SASA, Belgrade, Yugoslavia
  • Volume
    1
  • fYear
    1997
  • Firstpage
    181
  • Abstract
    In this paper, thermal and electron transport properties of GaAs single crystal were determined using the photoacoustic method with transmission detection configuration. Experimentally obtained values for amplitude and phase of PA signal were numerically fitted with theoretically calculated ones in order to determine parameters such as: excess carrier lifetime, thermal diffusivity, coefficient of carrier diffusion, the front and rear recombination velocity and absorption coefficient.
  • Keywords
    "Gallium arsenide","Optical surface waves","Laser beams","Microphones","Frequency measurement","Laser modes","Laser theory","Spontaneous emission","Optical modulation","Choppers"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625210
  • Filename
    625210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647806