Determination of transport parameters in heavily doped n-type InP

The transport characteristics of heavily doped n-type InP was calculated for free electron concentrations from 10/sup 17/ to 10/sup 21/ cm/sup -3/. The nonparabolic energy dispersion according to the kp model was taken into account. Detailed physical model with all important scattering mechanisms was included. The iterative method was used for determination the drift and Hall electron mobilities. The influence of upper minima was taken by including density of states effective mass. Calculations are performed at room temperature (300 K). Very good agreement between calculated results and available experimental data was obtained. Approximate relation for electron mobility was given, which may be used for simulation.