Some characteristics of amorphous semiconductors of the As-S-Se-Te-I system

The elements of technological process are presented yielding some new materials from the As-S-Se-Te-I system. The study was made using the cut (As/sub 2/S/sub 3/)/sub x/(AsSe/sub 0.5/Te/sub 0.5/I)/sub 100-x/ with the aim of characterizing the role of tellurium as the selenium substitution in the pseudobinary system As/sub 2/S/sub 3/-AsSeI. Densities of the obtained amorphous samples were determined and their relationship with the composition was established. The measured values of electrical conductivity at room temperature indicate involvement of the factors causing significant changes of this physical parameter.