DocumentCode
3647828
Title
Quantum approach to GaAs MESFETs
Author
S. Sasic;R. Ramovic;D. Tjapkin
Volume
1
fYear
1997
Firstpage
365
Abstract
This paper is devoted to an original method of the determination of carrier distribution in a GaAs MESFET channel based on the investigation of the transport equation including a quantum correction term.
Keywords
"Gallium arsenide","MESFETs","Poisson equations","Differential equations","Nonlinear equations","Quantum mechanics","Electrostatics","MOSFETs","Substrates","Voltage"
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625273
Filename
625273
Link To Document