DocumentCode :
3647830
Title :
Temperature distribution in VDMOS power transistor cells
Author :
Z. Pavlovic;I. Manic;Z. Prijic
Author_Institution :
Fac. of Natural Sci., Univ. of Pristina, Yugoslavia
Volume :
1
fYear :
1997
Firstpage :
403
Abstract :
This paper describes a numerical analysis of a self-heating effect and the effect of mutual heating of nearest neighbouring VDMOS power transistor cells. The temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS power transistors was calculated on the basis of the proposed mathematical model.
Keywords :
"Temperature distribution","Power transistors","Voltage","Power dissipation","Heating","Diodes","Thyristors","Numerical analysis","Silicon","Charge carrier lifetime"
Publisher :
ieee
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Print_ISBN :
0-7803-3664-X
Type :
conf
DOI :
10.1109/ICMEL.1997.625279
Filename :
625279
Link To Document :
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