• DocumentCode
    3647830
  • Title

    Temperature distribution in VDMOS power transistor cells

  • Author

    Z. Pavlovic;I. Manic;Z. Prijic

  • Author_Institution
    Fac. of Natural Sci., Univ. of Pristina, Yugoslavia
  • Volume
    1
  • fYear
    1997
  • Firstpage
    403
  • Abstract
    This paper describes a numerical analysis of a self-heating effect and the effect of mutual heating of nearest neighbouring VDMOS power transistor cells. The temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS power transistors was calculated on the basis of the proposed mathematical model.
  • Keywords
    "Temperature distribution","Power transistors","Voltage","Power dissipation","Heating","Diodes","Thyristors","Numerical analysis","Silicon","Charge carrier lifetime"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625279
  • Filename
    625279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647830