Title :
Analysis of FinFET technology on memories
Author :
E. Amat;A. Asenov;R. Canal;B. Cheng;J-Ll. Cruz;Z. Jakšić;M. Miranda;A. Rubio;P. Zuber
Author_Institution :
Universitat Politè
fDate :
6/1/2012 12:00:00 AM
Abstract :
Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.
Keywords :
"FinFETs","Computer architecture","Microprocessors","Random access memory","Fluctuations","Circuit stability","Stability analysis"
Conference_Titel :
On-Line Testing Symposium (IOLTS), 2012 IEEE 18th International
Print_ISBN :
978-1-4673-2082-5
DOI :
10.1109/IOLTS.2012.6313866
