DocumentCode
3648727
Title
Extraction of power VDMOS transistor model parameters using neural networks
Author
T. Trajkovic;P. Igic;N. Stojadinovic
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
2
fYear
1997
Firstpage
463
Abstract
A novel method for extraction of model parameters based on neural networks is presented and exemplified through its application to extraction of on-state model parameters of power VDMOSFETs. The method can be widely and efficiently used for parameter extraction of on-state and transient analytical models for a large class of microelectronic devices.
Keywords
"Neural networks","Voltage","Neurons","Analytical models","Parameter extraction","Microelectronics","Attenuation","Vectors","Transient analysis","Circuits"
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632869
Filename
632869
Link To Document