Title :
Extraction of power VDMOS transistor model parameters using neural networks
Author :
T. Trajkovic;P. Igic;N. Stojadinovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
A novel method for extraction of model parameters based on neural networks is presented and exemplified through its application to extraction of on-state model parameters of power VDMOSFETs. The method can be widely and efficiently used for parameter extraction of on-state and transient analytical models for a large class of microelectronic devices.
Keywords :
"Neural networks","Voltage","Neurons","Analytical models","Parameter extraction","Microelectronics","Attenuation","Vectors","Transient analysis","Circuits"
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632869
