• DocumentCode
    3648988
  • Title

    SiGe BiCMOS Technologies for Applications above 100 GHz

  • Author

    H. Rücker;B. Heinemann;A. Fox

  • Author_Institution
    IHP, Frankfurt (Oder), Germany
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes recent advances in SiGe HBT technology. Technological developments introduced for improved radio-frequency performance are discussed. HBT device characteristics are presented for a 0.13 μm SiGe BiCMOS technology with fT/fmax of 300/500 GHz and mini-mum CML ring oscillator gate delays of 2.0 ps. Sample circuit applications for operating frequencies above 100 GHz are discussed.
  • Keywords
    "Silicon germanium","Heterojunction bipolar transistors","BiCMOS integrated circuits","Current density","Gain","Logic gates","Delay"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4673-0928-8
  • Type

    conf

  • DOI
    10.1109/CSICS.2012.6340061
  • Filename
    6340061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3648988