DocumentCode :
3649747
Title :
Optimized RTD-HBT VCO design based on large signal transient simulations
Author :
B. Munstermann;A. Tchegho;G. Keller;F.-J Tegude
Author_Institution :
Solid-State Electron. Dept., Univ. of Duisburg Essen, Duisburg, Germany
fYear :
2012
Firstpage :
32
Lastpage :
35
Abstract :
This paper presents an optimized RTD-HBT single ended voltage controlled oscillator topology with increased tuning range and improved frequency stability at 20 GHz oscillation frequency. By connecting the RTD to the emitter of an HBT, a larger voltage swing at the parallel resonator compared to the direct connection can be achieved. In addition the RTD-capacitance influence on the oscillation frequency can be suppressed efficiently. Transient assisted harmonic balance simulations promise an increased oscillation power by 2 dB and a doubled tuning range of about 3.2 GHz compared to the conventional RTD-HBT circuits.
Keywords :
"Oscillators","Resonant frequency","Capacitance","Integrated circuit modeling","Tuning","Heterojunction bipolar transistors","Voltage measurement"
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
ISSN :
1092-8669
Print_ISBN :
978-1-4673-1725-2
Type :
conf
DOI :
10.1109/ICIPRM.2012.6403311
Filename :
6403311
Link To Document :
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