Planar and 3D Ge FETs

The strain response of high mobility Ge nFETs, low EOT (~1 nm) ZrO₂ Ge nFETs, and triangular Ge pFinFETs are reported. The strain response of (111) substrates is smaller than (001) substrates under tensile strain along <;110> channel direction. Low EOT gate-last Ge nFETs using ZrO₂ gate dielectric with nearly no interfacial layer is demonstrated with the superior electrical performance. Moreover, the triangular Ge GAA pFinFET with fin width (W_fin) of 52nm and L_g of 183nm has I_on/I_off = 10⁵, SS= 130mV/dec, and I_on=235 A/m at -1 V. T he dislocated Ge near Ge/Si interface on SOI was etched and formed nearly defect-free channels.