DocumentCode
3650079
Title
Room temperature THz detection and emission with semiconductor nanodevices
Author
J. Mateos;J. F. Millithaler;Ignacio Iniguez-de-la-Torre;A. Iniguez-de-la-Torre;B. G. Vasallo;S. Perez;T. Gonzalez;Y. Alimi;L. Zhang;A. Rezazadeh;A. M. Song;P. Sangare;G. Ducournau;C. Gaquiére;A. Westlund;J. Grahn
Author_Institution
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
fYear
2013
Firstpage
215
Lastpage
218
Abstract
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.
Keywords
"Oscillators","Gallium nitride","Geometry","Schottky diodes","Detectors","Indium gallium arsenide"
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2013 Spanish Conference on
ISSN
2163-4971
Print_ISBN
978-1-4673-4666-5
Type
conf
DOI
10.1109/CDE.2013.6481381
Filename
6481381
Link To Document