• DocumentCode
    3650394
  • Title

    Junction field-effect transistor based on GaAs core-shell nanowires

  • Author

    O. Benner;A. Lysov;C. Gutsche;G. Keller;C. Schmidt;W. Prost;F. J. Tegude

  • Author_Institution
    Solid State Electronics Department, University Duisburg-Essen, Germany
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.
  • Keywords
    "Nanowires","Gallium arsenide","Transistors","Logic gates","Current measurement","Dielectrics","Junctions"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562589
  • Filename
    6562589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3650394