Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures

InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. For signal detection we present a device with an additional third barrier to create an unsymmetrical I/V-characteristic. Sensitivity measurements are performed and further improvements by scaling of the active device area are discussed. To allow SPICE based circuit simulation an approach for a large signal model is presented.