• DocumentCode
    3651250
  • Title

    THz spectroscopy of the ammonothermal p-type GaN substrate with and without AlGaN/GaN epilayers

  • Author

    I. Kasalynas;A. Biciunas;R. Adomavicius;A. Krotkus;P. Prystawko;M. Leszczynski;R. Dwilinski

  • Author_Institution
    Center for Phys. Sci. &
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Complex refractive index of the ammonothermal p-type GaN substrate and on top grown AlGaN/GaN epilayers were measured by the terahertz time domain spectroscopy over the frequency range 0.1 to 3.0 THz. High THz transparency and low dispersion of the refractive index were observed for different conductivity p-type GaN semiconductor samples.
  • Keywords
    "Gallium nitride","Substrates","HEMTs","MODFETs","Aluminum gallium nitride","Refractive index","Conductivity"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665815
  • Filename
    6665815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3651250