DocumentCode
3652324
Title
An integrated switchable cascode RF power amplifier in GaN technology
Author
David Seebacher;Wolfgang Bösch;Peter Singerl;Christian Schuberth
Author_Institution
Graz Univ. of Technol., Graz, Austria
fYear
2013
Firstpage
1
Lastpage
4
Abstract
In this paper an integrated switchable cascode RF power amplifier (PA) will be presented. Modern communication standards use coding schemes with high peak to average power ratios (PAPR) therefore PA efficiency in back off is key to efficient transmitters. The proposed switchable cascode PA, which is based on a modified cascode structure, is capable of providing such an efficiency peak in back off. The operational principle is explained and a possible circuit implementation in GaN technology at 2.65 GHz is presented. At a maximum power of 2.74 W the circuit has a power added efficiency (PAE) of 65.4 % and at 0.57 W (6.7 dB backoff) a PAE of 60.2 %. In addition the combination with other efficiency enhancement methods such as baseband PWM or direct filter connection are covered.
Keywords
"Transistors","Switches","Pulse width modulation","Logic gates","Impedance","Gallium nitride","Switching circuits"
Publisher
ieee
Conference_Titel
Microwave and RF Conference, 2013 IEEE MTT-S International
Type
conf
DOI
10.1109/IMaRC.2013.6777705
Filename
6777705
Link To Document