DocumentCode
3653563
Title
A 4-transistor Euclidean distance cell for analog classifiers
Author
U. Cilingiroglu;D.Y. Aksin
Author_Institution
ETA Design Center, Istanbul Tech. Univ., Turkey
Volume
1
fYear
1998
Firstpage
84
Abstract
The areal efficiency of a high-throughput parallel classifier depends strongly on the area of the basic distance cell because classifier architectures contain a large array of such cells. For this reason, reducing the circuit complexity of a distance cell is expected to have a magnified impact on the overall size. A new squared Euclidean distance-cell configuration comprising four MOSFETs and two capacitors is proposed. The cell is based on symmetrical capacitive template storage and current-domain readout, which help reduce size while increasing speed and precision. A typical cell design in a mainstream 0.8 /spl mu/m CMOS technology occupies 17.2/spl times/21.9 (/spl mu/m/sup 2/) silicon area representing an areal density of 2650 cells per square millimeter. The article includes a description and analysis of the circuit, identifies design constraints and presents an error analysis.
Keywords
"Euclidean distance","MOSFETs","Capacitors","CMOS technology","Silicon","Circuit analysis","Threshold voltage","Time of arrival estimation","Design engineering","Error analysis"
Publisher
ieee
Conference_Titel
Circuits and Systems, 1998. ISCAS ´98. Proceedings of the 1998 IEEE International Symposium on
Print_ISBN
0-7803-4455-3
Type
conf
DOI
10.1109/ISCAS.1998.704191
Filename
704191
Link To Document