DocumentCode :
3654309
Title :
Structure Dependence of Notching: Simulation of Topography Dependent Charging with Sheath Oscillation Effect
Author :
T. Kinoshita;M. Hane;J.P. McVittie
Author_Institution :
Stanford University
fYear :
1996
fDate :
6/18/1905 12:00:00 AM
Firstpage :
47
Lastpage :
50
Keywords :
"Electrons","Voltage","Surface charging","Radio frequency","Steady-state","Space charge","Plasma sheaths","Plasma simulation","Plasma confinement","Plasma applications"
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715200
Filename :
715200
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3654309
