A modular approach for modeling and simulation of semiconductor power devices

This paper presents a modular approach for the modeling and simulation of power semiconductor devices. The novelty of the method is the accurate description of the carrier distribution in the low doped zone using a modular circuit network. This is achieved through the variational reformulation of the ambipolar diffusion equation (ADE) with posterior approximate solution with a finite element approach. The obtained modular networks are dependent on the physical properties of the device being modeled (element widths, mobilities, lifetimes, dopings). In this manner, the spatial variation of these parameters is easily implemented. Approaches to this modular construction can also be made with several types of finite elements. Modules for the others zones of the devices (emitters, narrow bases, MOS), as well as for the voltage drops, based on known approaches, are also presented. Semiconductor modeling is then made linking these various modules through the boundary conditions of the device. This enables easy construction of efficient circuits for semiconductor simulation. Results of the method for power p-i-n diodes and power bipolar junction transistors are presented.