DocumentCode :
36578
Title :
Characterization of Silicon Photomultipliers for nEXO
Author :
Ostrovskiy, I. ; Retiere, F. ; Auty, D. ; Dalmasson, J. ; Didberidze, T. ; DeVoe, R. ; Gratta, G. ; Huth, L. ; James, L. ; Lupin-Jimenez, L. ; Ohmart, N. ; Piepke, A.
Author_Institution :
Phys. Dept., Stanford Univ., Stanford, CA, USA
Volume :
62
Issue :
4
fYear :
2015
fDate :
Aug. 2015
Firstpage :
1825
Lastpage :
1836
Abstract :
Silicon Photomultipliers (SiPMs) are attractive candidates for light detectors for next generation liquid xenon double-beta decay experiments, like nEXO (next Enriched Xenon Observatory). In this paper we discuss the requirements that the SiPMs must satisfy in order to be suitable for nEXO and similar experiments, describe the two test setups operated by the nEXO collaboration, and present the results of characterization of SiPMs from several vendors. In particular, we find that the photon detection efficiency at the peak of xenon scintillation light emission (175-178 nm) approaches the nEXO requirements for tested FBK and Hamamatsu devices. Additionally, the nEXO collaboration performed radio-assay of several grams of bare FBK devices using neutron activation analysis, indicating levels of 40K, 232Th, and 238U of the order of <; 0.15, (6.9 · 10- 4 - 1.3 · 10- 2), and <; 0.11 mBq/kg, respectively.
Keywords :
photomultipliers; silicon radiation detectors; FBK devices; Hamamatsu devices; light detectors; nEXO collaboration; neutron activation analysis; next Enriched Xenon Observatory; next generation liquid xenon double-beta decay experiments; performed radio-assay; photon detection efficiency; silicon photomultipliers; xenon scintillation light emission; Detectors; Liquids; Noise; Photodetectors; Temperature measurement; Uncertainty; Xenon; Photodetectors; silicon photomultipliers; xenon detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2453932
Filename :
7182368
Link To Document :
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