DocumentCode :
3659148
Title :
Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks
Author :
Xiuyan Li;Takeaki Yajima;Tomonori Nishimura;Akira Toriumi
Author_Institution :
Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
This work clarifies roles of substrate-Si in SiO2-IL scavenging in HfO2/SiO2/Si gate stack experimentally, and points out a coupling effect of oxygen vacancy (VO) with SiO2/Si interface from thermodynamic viewpoint.
Keywords :
"Hafnium compounds","Silicon","Substrates","Silicon carbide","Logic gates","Nonhomogeneous media","Kinetic theory"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
Type :
conf
Filename :
7275282
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3659148
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