Experimental study of reliabilities in tri-gate nanowire transistor ~ What is main reliability issue in 3D transistor?

We experimentally study the various reliabilities in tri-gate nanowire transistors (NW Tr.) such as negative bias temperature instability (NBTI), hot carrier injection (HCI), and random telegraph noise (RTN). Those are crucial reliability issues for low power applications. NBTI in narrower width was enhanced because of the NW corner effects, whereas RTN amplitude can be well fitted to the conventional size dependence reported in the planar Tr. HCI and NBTI induced additional carrier traps leading to the increase in the number of observed RTN. Moreover, RTN amplitude was enhanced by HCI and NBTI and enhancement becomes larger in narrower width.