• DocumentCode
    3659157
  • Title

    Impact of diffused donor-clusters near lead/channel boundary on high-temperature single-electron tunneling in narrow SOI-FETs

  • Author

    D. Moraru;A. Samanta;Y. Takasu;K. Tyszka;T. Mizuno;R. Jablonski;M. Tabe

  • Author_Institution
    Faculty of Engineering, Shizuoka University, 3-5-1 Johoku Hamamatsu 432-8011, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We study the effect of phosphorus donors diffused as clusters near the boundary between lead and channel of silicon-on-insulator field-effect transistors (SOI-FETs). In the narrowest-channel devices, one such P-donor-cluster can fully modulate single-electron tunneling transport up to elevated temperatures (>120 K). These results suggest the importance of properly designing the lead edges to enhance the tunneling-operation temperature of dopant-based nano-devices.
  • Keywords
    "Tunneling","Lead","Nanoscale devices","Temperature","Field effect transistors","Modulation"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659157