• DocumentCode
    3659164
  • Title

    Series-triple quantum dots fabricated under each control gate by the use of thermal oxidation

  • Author

    Takafumi Uchida;Hikaru Sato;Atsushi Tsurumaki-Fukuchi;Masashi Arita;Akira Fujiwara;Yasuo Takahashi

  • Author_Institution
    Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Triple quantum dots (QDs) connected in series were successfully fabricated by the use of pattern-dependent oxidation (PADOX) [1] of a Si nanowire and additional oxidation through the gap of three fine gate electrodes attached on the Si nanowire. This method made a QD just under each gate. The fabricated devices were confirmed that they actually consisted of three dots by the electrical measurements, in which gate capacitances between the gates and dots were successfully evaluated. These results demonstrated the applicability of PADOX method to make many QDs connected in series by increasing the number of fine gate electrodes attaching on the nanowire.
  • Keywords
    "Logic gates","Capacitance","Electrodes","Silicon","Circuit stability","Quantum dots","Oxidation"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275298