Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique

We demonstrated a novel CMOS approach for the fabrication of high-performance Ge quantum dot (QD) MOSFETs offering great promises as optical switches and transducers for Si-based optical interconnects. Measured photocurrent to dark current ratio (I_ph/I_dark) and photoresponsivities from the Ge QD PT were as high as 272,000 and 1.7 A/W, respectively, under incident power of 20 μW at 980 nm illumination. Carrier dynamics in Ge QDs were characterized by applying a depleting voltage pulse to the gate of MOSFET and by time-resolved photoluminescence on Ge QD array.