• DocumentCode
    3659170
  • Title

    Short-drain effect of 5 nm tunnel field-effect transistors

  • Author

    Yu-Hsuan Chen;Nguyen Dang Chien;Jr-Jie Tsai;Yan-Xiang Luo;Chun-Hsing Shih

  • Author_Institution
    Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and degraded short-channel effect. The shorter channel is, the more pronounced is the short-drain effect.
  • Keywords
    "Logic gates","Transistors","Switches","Electrical engineering","Physics","Electronic mail"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275304