Title :
Thermodynamic stability of high phosphorus concentration in silicon nanostructures
Author :
Michele Perego;Gabriele Seguini;Elisa Arduca;Jacopo Frascaroli;Davide De Salvador;Massimo Mastromatteo;Alberto Carnera;Giuseppe Nicotra;Mario Scuderi;Corrado Spinella;Giuliana Impellizzeri;Cristina Lenardi;Enrico Napolitani
Author_Institution :
Lab. MDM, IMM, Agrate Brianza, Italy
fDate :
6/1/2015 12:00:00 AM
Abstract :
In this work we focus on P doping of Si nanocrystals (NCs) embedded in a SiO2 matrix. We prove that, at equilibrium, high P concentrations within the Si NCs are thermodynamically favoured. We experimentally estimate the energy barriers for P diffusion in SiO2 and trapping/de-trapping at the SiO2/Si NCs interface, obtaining a complete picture of the system at equilibrium.
Keywords :
"Silicon","Nanocrystals","Annealing","Thermodynamics","Doping","Stability analysis"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
