• DocumentCode
    3659179
  • Title

    Bringing physics to device design — A fast and predictive device simulation framework

  • Author

    M. Karner;Z. Stanojević;F. Mitterbauer;C. Kernstock;H. Demel

  • Author_Institution
    Global TCAD Solutions GmbH., Landhausgasse 4/1a, 1010 Vienna, Austria
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present a physically grounded modeling, simulation, and parameter-extraction framework that targets design and engineering of ultra-scaled devices and next-generation channel materials. The framework consists of a fast and accurate Schrödinger-Poisson solver/mobility extractor coupled to a device simulator. The framework brings physical modeling of semiconductor channels to device design and engineering which until now has been the domain of TCAD tools based on purely empirical models.
  • Keywords
    "Stress","Electric potential","Transistors","Logic gates","Numerical models","Couplings","Mathematical model"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275313