• DocumentCode
    3659181
  • Title

    Physics-based model for the conductive filament at the low resistance state of thin SiO2 films

  • Author

    Rintaro Yamaguchi;Shingo Sato;Yasuhisa Omura

  • Author_Institution
    Dpt. Electronics, Kansai University, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper proposes the possible physics-based model for the conductive filament (CF) at the low-resistance state (LRS) of thin SiO2 films that were formed by sputtering technique. The closed and analytical current models proposed here are examined by experimental results.
  • Keywords
    "Films","Electrodes","Substrates","Capacitors","Resistance","Sputtering","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275315
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659181