• DocumentCode
    3659184
  • Title

    Silicon-compatible resonant plasma-wave transistor with 2D silicene channel for high-performance terahertz electromagnetic wave emitters

  • Author

    Jong Yul Park;Sung-Ho Kim;Kyung Rok Kim

  • Author_Institution
    School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Korea
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we propose a novel Si-compatible resonant plasma-wave transistor (R-PWT) with 2D silicene channel for a high-performance terahertz (THz) electromagnetic (EM) wave emitter. High resonance quality i.e. narrow emission spectra can be obtained by high mobility of 2D silicene channel (μ= 2×105 cm2V-1·s-1) since nanoscale channel length L can be much smaller than the maximum channel length Lmax= 1395 nm even under relatively low gate voltage.
  • Keywords
    "Resonant frequency","Oscillators","Harmonic analysis","Electromagnetic scattering","Silicon","Field effect transistors"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659184