• DocumentCode
    3659187
  • Title

    New features in planar SiGe channel tunnel FETs performance and operation

  • Author

    C. Le Royer;L. Hutin;S. Martinie;P. Nguyen;S. Barraud;F. Glowacki;S. Cristoloveanu;M. Vinet

  • Author_Institution
    CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the characterization of SiGe Tunnel FETs (TFETs) fabricated on SGOI with a standard CMOS process. The large gain in saturation gain (x20) is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). We also investigate the ambipolar signature from the ID(VDS) of TFETs which we compare to MOSFETs. A simple protocol is proposed and validated to get a rapid insight in injection mechanism at the two junctions of any FET device.
  • Keywords
    "Silicon germanium","Photonic band gap","MOSFET circuits","Logic gates","Tunneling","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659187