Title :
Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate
Author :
K. Iwasaki;T. Kodera;S. Oda
Author_Institution :
Department of Physical Electronics, Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, Ookayama, Megruro-ku, Tokyo, Japan
fDate :
6/1/2015 12:00:00 AM
Abstract :
We fabricate and characterize p-channel double quantum dots (DQDs). The DQDs are formed on a silicon-on-insulator (SOI) wafer and integrated with a single hole transistor (SHT) as a charge sensor. We observe charge stability diagram of the DQDs in the characteristic of the charge sensor. Furthermore, few-hole regime in the DQDs is clearly obtained.
Keywords :
"Silicon","Quantum dots","Substrates","Logic gates","Silicon-on-insulator","Transistors","Tunneling"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
