DocumentCode
3662606
Title
Contactless detection of faulty TSV in 3D IC via capacitive coupling
Author
Iftekhar Ibne Basith;Rashid Rashidzadeh;Esam Abdel-Raheem
Author_Institution
Department of Electrical and Computer Engineering, University of Windsor, ON, Canada
fYear
2015
Firstpage
1
Lastpage
4
Abstract
3D IC using Through Silicon Via (TSV) is a promising technology for next generation of integrated circuits. Manufacturing TSV defects like voids and pinholes have to be detected at the test phase to ensure fault free ICs. In this paper a contactless probe utilizing capacitive coupling is presented. The proposed method eliminates the impact of direct probing on TSV and supports the high-density and fine-pitch requirements for TSV probing. 3D full-wave simulations using HFSS and circuit level simulation using ADS show that common TSV defects such as voids and pinholes can be detected successfully.
Keywords
"Circuit faults","Probes","Integrated circuit modeling","Three-dimensional displays","Testing","Through-silicon vias"
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2015 IEEE 58th International Midwest Symposium on
Type
conf
DOI
10.1109/MWSCAS.2015.7282065
Filename
7282065
Link To Document