• DocumentCode
    3664643
  • Title

    Analysis of the internal quantum efficiency of β-FeSi2 light-emitting diode

  • Author

    Jung-Sheng Huang;Kuan-Wei Lee;Cheng-Yao Huang;Peng-Fei Zhang;Jia-Le Xia

  • Author_Institution
    Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan, ROC
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    37
  • Lastpage
    40
  • Abstract
    This work is to calculate the dc characteristics and investigate the internal quantum efficiencies of β-FeSi2-based DH LED and AlGaAs/GaAs DH LED by analytical methods. The internal quantum efficiencies are decreased as the applied forward-bias voltages are increased. When the intrinsic layer thicknesses and doping concentrations are increased, the internal quantum efficiencies will also increase. At high forward-bias voltages, the internal efficiencies of AlGaAs/GaAs DH LED are superior than that of β-FeSi2 DH LED.
  • Keywords
    "Conferences","Electron devices","Solid state circuits","Decision support systems"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285043
  • Filename
    7285043
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664643