Title :
Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current
Author :
Ru Huang;Qianqian Huang;Chunlci Wu;Jiaxin Wang;Cheng Chen;Hao Zhu;Lingyi Guo;Yangyuan Wang
Author_Institution :
Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871 Innovation Center for MicroNanoelectronics and Integrated System, Beijing 100871, China
fDate :
6/1/2015 12:00:00 AM
Abstract :
This paper discusses a kind of novel steep-slope switch device, named as multi-finger Schottky-Barrier TFET (MFSB-TFET), with hybrid adaptive operation mechanism, for higher on current, steeper slope as well as low off current. With the on state dominated by Schottky injection current, transition region dominated by band-to-band tunneling and the off current greatly suppressed with increased effective barrier height, the proposed silicon-based MFSB-TFET has experimentally demonstrated low SS, high on current and high on-off current ratio, exhibiting great potentials for ultra-low-power circuit applications.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285049
