An equivalent capacitance model of oxide traps on frequency dispersion of C-V curve for MOS devices

An equivalent capacitance model is developed to explain frequency dispersion in accumulation or near-flatband region of C-V curve for MOS devices. This model is based on Fermi-Dirac statistics and tunneling mechanism of carriers and is simpler and more intuitive than the previous lumped-circuit model due to considering only capacitance of oxide traps. Using different space distribution of the oxide traps, the validity of the model is confirmed by fitting to experimental data of MOS devices with different types of substrates and channel concentrations.