• DocumentCode
    3664699
  • Title

    Strain modulated variations in monolayer phosphorene n-MOSFET

  • Author

    Arnab Mukhopadhyay;Lopamudra Banerjee;Amretashis Sengupta;Hafizur Rahaman

  • Author_Institution
    School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur Howrah-711103, India
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    261
  • Lastpage
    264
  • Abstract
    We investigate the effect of tensile and compressive strain in Phosphorene FET. Different percentage of tensile and compressive strain are applied on monolayer Phosphorene along the zigzag edge and the corresponding effects on bandgap, electron effective mass and ON current are analyzed. The optimum strain region is observed at 4% tensile strain for Phosphorene for the application in FET device. About 8.5 times improvement in ON current was observed for this strain percentage.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285100
  • Filename
    7285100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664699