Title :
Modeling of reverse recovery effect for embedded diode in SJ MOSFET
Author :
R. Matsui;D. Suzuki;Y. Tanimoto;M. Kitamura;H. Kikuchihara;H. J. Mattausch;M. Miura-Mattausch
Author_Institution :
Advanced Sciences of Matter, Hiroshima University, Kagamiyama, Higashi-Hiroshima, Japan
fDate :
6/1/2015 12:00:00 AM
Abstract :
This investigation aims at developing a compact model for the embedded diode in Super-Junction MOSFETs applicable for more than 500V bias conditions. It is demonstrated that the reverse-recovery effect is different from the conventional stand-alone pin diode. The reason is the extension of the depletion at the additional p/n junction in the Super-Junction MOSFET under reverse bias applications. The depletion region prevents the current flow and thus forcing the rapid charge dissipation from the device. We have developed an embedded diode model on the basis of HiSIM-Diode originally developed for the conventional pin diode.
Keywords :
"Switches","PIN photodiodes","Charge carrier density","Junctions","MOSFET","Integrated circuit modeling","Electrodes"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285129
