DocumentCode :
3664742
Title :
Field emission properties of vertically aligned MoS2 nanosheets
Author :
Han Li;Huaqiang Wu;Bo Wang;He Qian
Author_Institution :
Institute of Microelectronics, Tsinghua University, Beijing, China
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
431
Lastpage :
434
Abstract :
We report here the field emission investigation of vertically aligned MoS2 nanosheets. Vertically aligned layered MoS2 nanosheets were synthesized by chemical vapor deposition (CVD) process with high controllability. The turn-on field required to draw a field emission current density of 10 μA/cm2 is found to be 2.86 V/μM, which is comparable with previously reported MoS2 nonosheets and graphene. The low turn-on field is due to the high field enhanced factor (~3850) associated with the nanometric protrusions and sharp edges observed on MoS2 surface. In addition, the electron field emission current is also consistent with the Fowler-Nordheim (F-N) theory and shows a good emission stability. These great field emission properties demonstrate that MoS2 could be utilized for flat panel display applications.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
Type :
conf
DOI :
10.1109/EDSSC.2015.7285143
Filename :
7285143
Link To Document :
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