• DocumentCode
    3664809
  • Title

    Electrode effects on the current conduction mechanisms in TaOx-based RRAM

  • Author

    V. Y.-Q. Zhuo;M.-H. Li;Y. Jiang

  • Author_Institution
    Data Storage Institute, A∗
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    693
  • Lastpage
    696
  • Abstract
    To understand the current conduction mechanism of TaOx RRAM with different top electrodes, we investigated the field and temperature dependence of the charge transport. High resistance state shows a transition from Ohmic to Schottky emission then to Poole-Frenkel emission as the electric field increases. Different top electrode materials impact the Schottky and trap barrier heights which affect device performance.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285211
  • Filename
    7285211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664809