Title :
Electrode effects on the current conduction mechanisms in TaOx-based RRAM
Author :
V. Y.-Q. Zhuo;M.-H. Li;Y. Jiang
Author_Institution :
Data Storage Institute, A∗
fDate :
6/1/2015 12:00:00 AM
Abstract :
To understand the current conduction mechanism of TaOx RRAM with different top electrodes, we investigated the field and temperature dependence of the charge transport. High resistance state shows a transition from Ohmic to Schottky emission then to Poole-Frenkel emission as the electric field increases. Different top electrode materials impact the Schottky and trap barrier heights which affect device performance.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285211
