• DocumentCode
    3664811
  • Title

    Impact of post-deposition annealing on the resistive switching characteristics and forming voltage step of Al/HfO2/W structures

  • Author

    J. Molina-Reyes;R. Valderrama-B

  • Author_Institution
    Electronics Department, National Institute of Astrophysics, Optics and Electronics (INAOE), Tonantzintla, Puebla, Mé
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    701
  • Lastpage
    704
  • Abstract
    MIM structures based in hafnium oxide with different annealing process were fabricated. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. We probe that one of our structures can be integrated into the BEOL stage of a CI.
  • Keywords
    "Annealing","Electrodes","Hafnium compounds","Performance evaluation","Optical switches","Temperature"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285213
  • Filename
    7285213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664811