Effect of disparate carrier velocity in GaN on the terahertz characteristics of double drift region mixed tunnelling avalanche transit time diode

The potentials of GaN as a terahertz source is explored using some computer simulation programs developed by the authors. Contrary to the expectation, the power generating potential of GaN is observed to be much inferior to that of SiC due to the disparate carrier velocity in the former. In addition, GaN produces roughly 10 dB more noise compared to SiC when operated as a double drift region mixed tunneling avalanche transit time diode in the near terahertz region.