• DocumentCode
    3667163
  • Title

    1/F noise and superimposed RTS noise in Ti-Au/n-type GaAs Schottky barrier diodes

  • Author

    A. V. Klyuev;A. V. Yakimov

  • Author_Institution
    Department of Bionics and Statistical Radiophysics, Lobachevsky State University, Nizhni Novgorod, Russia
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Low frequency noise characteristics of Schottky diodes are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It is concluded that the RTS noise and 1/f noise have different physical origins in Schottky diodes.
  • Keywords
    "Schottky diodes","1f noise","Fluctuations","Gaussian noise","Noise measurement","Gallium arsenide"
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICNF.2015.7288575
  • Filename
    7288575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667163