Simulation of shot noise measurement experiments in graphene

We have adopted an approximate technique for the determination of the potential landscape and an envelope-function based transport calculation to simulate the shot noise properties, in the presence of potential disorder, of a graphene constriction biased through lateral split gates. Our numerical results are in good qualitative agreement with the measurements recently performed by A. Mostovov and D. C. Glattli on this structure, which show a dependence of the Fano factor on the gate bias, with a maximum around the Dirac point.