Effects of radiation-induced changes in low-frequency noise of infrared detectors

Low frequency noise is always used as a parameter to characterize the performance and reliability of electronics devices. In the study, a noise model of infrared detector which takes into account the grain and grain boundary was proposed. Then, the changes in low frequency noise, as an function of gamma irradiation at dose rate of 0.1 rad(Si)/s and 10 rad(Si)/s, are investigated. The experimental results shown that a lower dose rate irradiation induce more defects in infrared detector.