• DocumentCode
    3667367
  • Title

    Purely sidewall InGaN/GaN core-shell nanorod green light-emitting diodes

  • Author

    Da-Wei Lin;Yung-Chi Wu;Hao-Chung Kuo;Gou-Chung Chi;Yu-Pin Lan;Lung-Hsing Hsu;Yang-Fang Chen

  • Author_Institution
    Department of Photonics &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel purely sidewall InGaN/GaN core-shell nanorod green light-emitting diode (LED) has been demonstrated by 3D dielectric passivation and selective epitaxial growth technologies. The LED device exhibits unprecedented stable emission wavelength and low efficiency droop.
  • Keywords
    "Nanoscale devices","Epitaxial growth","Three-dimensional displays","Gallium nitride","MOCVD","Semiconductor device measurement"
  • Publisher
    ieee
  • Conference_Titel
    Optical MEMS and Nanophotonics (OMN), 2015 International Conference on
  • ISSN
    2160-5033
  • Print_ISBN
    978-1-4673-6834-6
  • Electronic_ISBN
    2160-5041
  • Type

    conf

  • DOI
    10.1109/OMN.2015.7288872
  • Filename
    7288872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667367