Composite behaviors of series and parallel meminductor circuits

Meminductor generated on the basis of the conception of a memristor has many promising characteristics, such as analog processing capacity, storing energy and operating as non-volatile memories with essentially lossless data reading and storing, etc.^[1] However, there are few studies about meminductor´s applications due to the unavailability of solid-state meminductor and composite behaviors of multiple meminductor series-parallel circuits are not fully understood. In this paper, we investigate the composite characteristics of multiple meminductor circuits via the relationships among charge, the time integral of flux and meminductance of each meminductor and composite device. Furthermore, a general computing method of composite meminductance for multiple meminductor circuits is proposed. The results of this study can be used to construct composite meminductor circuits with complex characteristics and have promising applications in the non-volatile memory circuits.