Multiscale strain simulation for semiconductor devices base on the valence force field and the finite element methods

This paper presents a new methodology for multiscale strain simulations of semiconductor devices based on the valence force field (VFF) method and the finite element method (FEM). By coupling the atomistic and the continuum methods, only advantages such as the atomistic description and accuracy of the VFF method and the flexibility and numerical efficiency of the FEM can be obtained.