Title :
Full-zone k · p parametrization for III-As materials
Author :
G. Mugny;D. Rideau;F. Triozon;Y.-M. Niquet;C. Kriso;F.G. Pereira;D. Garetto;C. Tavernier;C. Delerue
Author_Institution :
STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France
Abstract :
This paper presents a modeling study of III-As materials´ band structure obtained with a full-zone 54-band k· p model. This model, extending the 30-band model of Refs. [1], [2], accounts for (220) bands and allows a better description of the band structure in the vicinity of the K point [2]. The band gaps and effective masses derived from the band structure are compared with values obtained from other methods, such as the empirical pseudopotential method (EPM) and the tight-binding (TB) approach. Band structures for InxGa1-xAs alloys with different In mole fraction x are computed within the virtual crystal approximation.
Keywords :
"Gallium arsenide","Photonic band gap","Effective mass","Computational modeling","Metals","Silicon","Crystals"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292250