Numerical simulation of highly periodical Ge/Si quantum dot array for intermediate-band solar cell applications

In this work, an efficient method is applied to calculate the miniband structure and density of states for well-ordered Ge/Si quantum dot (QD) array fabricated by combining the self-assemble bio-template and damage-free neutral beam etching. Within the envelop-function framework, this computational model surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and the numerical results provide a guideline for Ge/Si QD solar cell design by simulating the effect of the interdot space and QD´s dimension on miniband structure and conversion efficiency.