Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials

An open boundary-conditions full-band quantum transport formalism with a plane-wave basis based on empirical pseudopotentials is used to self-consistently simulate transistors in the sub-1 nm technology node, with one-dimensional silicon nanowires, armchair-edge graphene nanoribbons, and zigzag-edge carbon nanotubes as the channel. The electrostatic potential energy and charge density distribution are shown. Current-voltage characteristics of these devices are obtained.