Title :
Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials
Author :
Jingtian Fang;William G. Vandenberghe;Massimo V. Fischetti
Author_Institution :
Department of Materials Science and Engineering, The University of Texas at Dallas, USA
Abstract :
An open boundary-conditions full-band quantum transport formalism with a plane-wave basis based on empirical pseudopotentials is used to self-consistently simulate transistors in the sub-1 nm technology node, with one-dimensional silicon nanowires, armchair-edge graphene nanoribbons, and zigzag-edge carbon nanotubes as the channel. The electrostatic potential energy and charge density distribution are shown. Current-voltage characteristics of these devices are obtained.
Keywords :
"Logic gates","Photonic band gap","Potential energy","Transistors","Silicon","Nanowires","Carbon nanotubes"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292264
